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氧化锌透明导电薄膜的制备及其特性

PREPARATION AND PROPERTIES OF ZnO TRANSPARENT CONDUCTING FILM

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【作者】 倪星元吴永刚吴广明张慧琴金哲民

【Author】 NI Xingyuan; WU Yonggang;WU Guangming; ZHANG Huiqin; JIN Zhemin (Department of Physics, Tongji Univisity, Shanghai 200092)(To whom correspondence should be addressed)

【机构】 同济大学物理系!上海市200092同济大学

【摘要】 氧化锌薄膜的透明导电特性与化学计量偏离和溅射条件有关.以2%(质量分数)氧化铝掺杂的氧化锌陶瓷作靶,采用RF磁控溅射技术制备的透明导电薄膜,其电阻率4.5×10-3Ωcm,载流子浓度2.8×1020cm-3,霍尔迁移率15.8cm2/V·s,平均透射率(400~800nm)大于80%.

【Abstract】 The dependence of electrical and optical properties on target material and sputtering conditions have been investigated. Al2O3 were doped with 2% (mass fraction) in the target of ZnO.The film were produced by RF planar magnetron sputtering. The resistivity of the film is 4.5 × 10-3Ωcm,carrier concentration and Hall mobility are 2.8x 1020cm-3 and 15.8cm2/V.s respectively. The optical transmittance is about 80%.

【关键词】 氧化锌薄膜透明导电薄膜溅射
【Key words】 ZnO filmtransparent conducting filmsputtering
  • 【文献出处】 材料研究学报 ,CHINESE JOURNAL OF MATERIAL RESEARCH , 编辑部邮箱 ,1999年03期
  • 【分类号】O484
  • 【被引频次】12
  • 【下载频次】400
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