【摘要】 传统分子束外延(MBE)技术是不能生长含磷化合物的,原因在于通常情况下磷会带来很高的饱和蒸气压,使得生长难于控制。近几年来兴起的全固源MBE技术结合了裂解技术、阀门机制、“三温度区”结构及原位产生白磷的思想,它解决了传统MBE难以生长含磷材料的难题,与气源(GS)MBB和有机金属气相外延(MOCVD)相比,在成本和安全性方面具有优势,成为极具发展潜力的新一代外延生长技术。利用全固源MBE技术可生长高性能半导体光电子材料,尤其是InGaAsP系材料,其器件性能达到或超过了MOCVD、GSMBE生长的同类器件的最佳水平。更多还原

【Abstract】 Traditional molecule beam epitaxy (MBE) is a key technology for fabrication of optoelectronic de-vices, but it can not grow the phophorus compound. Rather recently, all solid-source MBE technique, which combine cracking, valve assembly, the structure with three femperature zone and the idea of in-situ generation of white phos. phorus, shows that it is a very promising novel epitaxy growth technique for the growth of phosphorus related materi-als. In this paper, a brief review on all solid-source MBE and its applications in fabrication of optoelectronic devices is given.更多还原