【摘要】 利用热重量分析法（简称TGA法）、X射线衍射（X-Ray diffraction）和扫描电镜观察（SEM）分析了SiC在MoSi₂低温氧化中的作用。结果表明SiC的加入促进了MoSi₂的氧化,但未发现“PEST”现象。更多还原

【Abstract】 In this paper the effects of SiC on low-temperature oxidation of MoSi₂ have been analyzed by TGA,X-ray diffraction and SEM. It was found that the degree of oxidation of MoSi₂ was increased by adding SiC, but"PEST" didn’t been found.更多还原