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硅基热线式气敏元件及其特性
Gas Sensor with Sillicon Substrate in Heat-Wire Type and Its Characteristics
【摘要】 利用射频溅射在硅衬底上制作 Pt膜电极,以溶胶-凝胶法制作的低阻 SnO2为敏感层制成平面热线式气敏元件.研究了工艺条件、掺杂行为及其对气敏特性的影响.掺Sb(3% atm)及 Pt石棉(2% wt)在 700℃烧结 1. 5 h的元件对 H2、NH3灵敏度较高。
【Abstract】 Pt film electrodes on Si substrate were formed by RF sputtering, then planar heat-wire type sensors were fabricated with low resistance SnO2 powder prepared by solgel method. The influence of technologic conditions and doping on gas-sensitive characteristic has been studied. Senors based--SnO2 doped Sb (3 % atm), Pt asbestos 2 % wt and sintered at 700 ℃ for 1. 5 h were sensitive to H2. NH3 gases.
【关键词】 气敏元件;
硅;
平面热线式;
气敏特性;
【Key words】 gas sensor silicon planar heat--wire type gas--sensitive characteristics;
【Key words】 gas sensor silicon planar heat--wire type gas--sensitive characteristics;
【基金】 国家自然科学基金
- 【文献出处】 传感技术学报 ,JOURNAL OF TRANSCLUCTION TECHNOLOGY , 编辑部邮箱 ,1999年03期
- 【分类号】TN304
- 【被引频次】1
- 【下载频次】42