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衬底负偏压热灯丝CVD金刚石薄膜在锥体上核化的研究
Studies of the Silicon Cones of Diamond Films by Biased Hot Filament Chemical Vapor Deposition
【摘要】 以CH4 和H2 为反应混合气体,用衬底负偏压热灯丝CVD法在Si(100)面上制备金刚石膜,使用扫描电子显微镜(SEM)、Ram an 谱和X射线光电子能谱(XPS)对在硅尖上的金刚石核化进行了研究,并着重讨论了沉积在硅尖上的金刚石颗粒的生长机理。
【Abstract】 Diamond films are deposited on Silicon (100) substrate by bias enhanced hot filament chemical vapor deposition from a gas mixture of methane and hydrogen. The nucleation of diamond on the silicon cones was studied by scanning electron microscopy, Raman spectroscopy and X ray photoelectron spectroscopy. It has emphatically discussed the growth mechanism of diamond deposited on the silicon cones.
【基金】 国家自然科学基金资助项目!(No.19904016)
- 【文献出处】 重庆邮电学院学报 ,Journal of Chongqing University of Posts and Telecommunications , 编辑部邮箱 ,1999年04期
- 【分类号】O484.1
- 【被引频次】2
- 【下载频次】42