【摘要】 本文对ＡｌＧａＩｎＰ／ＧａＡｓ异质结双极晶体管（ＨＢＴ）进行了研究．设计并制备了ＡｌＧａＩｎＰ为发射极的叉指结构ＨＢＴ器件．研究结果表明，ＡｌＧａＩｎＰ／ＧａＡｓＨＢＴ具有较高的电流增益和较好的温度特性．同时，由于对ＡｌＧａＩｎＰ和ＧａＡｓ腐蚀选择性大，因而工艺简单、重复性好．更多还原

【Abstract】 Abstract This paper investigates the design and fabrication of AlGaInP/GaAs Heterojunction Bipolar Transistor with cross finger construction. The results show that the device in our investigation have high current gain and good temperature performance. The fabrication process of AlGaInP/GaAs HBTs is simple and repeatable due to well selective etching characteristic on the interface between AlGaInP and GaAs materials.更多还原