【摘要】 利用同步辐射光电子能谱研究了ＣＨ３ＣＳＮＨ２钝化的ＧａＰ（１００）表面和稀土金属Ｇｄ淀积到Ｓ－ＧａＰ（１００）表面的界面形成，结果表明ＣＨ３ＣＳＮＨ２溶液对ＧａＰ（１００）表面具有钝化作用，形成了Ｇａ和Ｐ的硫化物钝化层，对钝化表面退火，Ｐ－Ｓ键逐渐消失，而仅仅留下了Ｇａ－Ｓ键．Ｇｄ淀积到硫钝化退火的ＧａＰ表面，Ｐ的扩散被有效地阻止，而Ｓ仍保持在界面处，Ｇｄ与表面的元素态Ｐ和二聚体Ｇａ反应，形成金属Ｇａ向淀积的Ｇｄ金属层扩散，导致金属Ｇａ在表面偏析．更多还原

【Abstract】 Abstract CH 3CSNH 2 passivated GaP(100) surface and interface of rare earth Gd deposited on S passivated GaP(100) have been studied by synchrotron radiation photoemission. The results show that the sulfides of Ga and P can be formed on GaP surface by CH 3CSNH 2 treatment. By annealing for passivated surface, the P S bond is gradually disappered and only Ga-S bond is remained in the surface. While Gd is deposited on such S GaP(100) surface, we found that eliminates the problems of the substrate P interdiffusion through the overlayer due to S being remained at the interface.更多还原