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超晶格(GaAs)n/(InAs)1(001)的光学性质

Optical Properties of (GaAs)\n/(InAs)\1(001) Superlattices

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【作者】 李开航黄美纯张志鹏朱梓忠

【Author】 Li Kaihang, Huang Meichun, Zhang Zhipeng, Zhu Zizhong(Physics Department Xiamen University, Xiamen\ 361005)Received 3 May 1998, revised manuscript received 24 November 1998

【机构】 厦门大学物理系!厦门361005

【摘要】 采用Linearized-Muffin-Tin-Orbital(LMTO)能带方法对应变超晶格(GaAs)n/(InAs)1(001)进行自洽计算.在得到较准确能带结构和本征波函数的基础上,计算该超晶格的光学介电函数虚部ε2(ω)、折射率和吸收系数.结果表明,该超晶格表现出的光学性质和GaAs 体材料不相同,在1.5~2.5eV 能量范围的吸收系数增大,且该超晶格在较宽的能量范围内有较好的光谱响应

【Abstract】 We perform self\|consistent band calculation of (GaAs) n /(InAs)\-1(001) superlattices (SL’s) by means of Linerized\|Muffin\|Tin\|Orbital (LMTO) method. The imaginary part of the dielectric functions, the refractive index and the absorption coeffecient for the (GaAs) n /(InAs)\-1(001) SL’s have been calculated on the basis of the available results of relatively accurate eignvalue and eignfunction for SL’s. The calculated results show that the optical properties of (GaAs) n /(InAs)\-1(001) SL’s are different from the of bulk GaAs. The absorption coeffecient for the (GaAs) n /(InAs)\-1(001) superlattices is higher than that of bulk GaAs in the energy range from 1.5eV to 2.5eV. The superlattices also have rather good spectra response over a wide range of energy.

【基金】 国家高技术(863)新材料领域(863-715-10)课题资助
  • 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1999年10期
  • 【分类号】O472.3
  • 【被引频次】2
  • 【下载频次】87
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