【摘要】 本文采用数值模拟方法，在考虑短沟效应、开态电流、关态电流和开路电压增益等因素的基础上，首次给出ＧＣＨＴ低压工作下（０．８Ｖ）的设计容区图，清晰地反映了各效应对参数要求的矛盾折中，为器件设计提供了理论依据，也为合理开发深亚微米工艺指明了方向．本文采用的数据处理方法同时可用于针对成熟工艺线的实际器件与电路设计更多还原

【Abstract】 The comprehensive design guidelines are provided in this paper for the first time, especially for GCHT operating at low voltage, which is an advantageous operating region of GCHT. The examined mechanisms in this study involve in the short channel effect, current driving capability, device off\|characteristic and open\|circuit voltage gain, with both digital applications and analog applications requirement considered. Five key parameters are taken into account, including the channel length (base width), gate oxide thickness, channel doping concentration, silicon film thickness and the buried oxide thickness. Considering the design criteria for low voltage, the above\|mentioned different mechanisms are investigated. The design curves for low operating voltage (0.8V) are presented by synthesizing the results. The tradeoffs between different parameter requirements for different effects are explicitly illuminated in the design figure, showing the greatly\|extended allowable design region and pointing out the direction for the deep submicron device development. The data disposal method presented in this paper can be used to the practical device and circuit design with a relaiable processing line.更多还原