【摘要】 窄禁带、含Ｈｇ 的Ⅱ－Ⅵ族化合物半导体晶体的电性能受缺陷影响很大，蚀坑密度又是缺陷电学性质研究中重要的相关参数．本文从腐蚀机理出发，研究了ＨｇＭｎＴｅ 的腐蚀工艺，探索出一种适合于ＨｇＭｎＴｅ 的腐蚀液．从实验结果来看，该腐蚀液可显示不同晶面上的多种缺陷，如位错、晶界、孪晶、杂质和沉淀等，而且腐蚀质量高．以此为基础，我们还分析了ＡＣＲＴ 和Ｂｒｉｄｇｍ ａｎ 两种方法生长的ＨｇＭｎＴｅ 晶体中缺陷的形貌特点及分布情况更多还原

【Abstract】 The electronic properties of narrow gap Ⅱ\|Ⅵ compounds containing Hg are dominated by defects.The etch\|pit density(EPD) is one of the important reference parameter frequently used in the studies of the electronic properties of defects.Based on the mechanics of etching,we study the etching process of HgMnTe,and find out an etch appropriate for HgMnTe.Experimental results show that this etch can reveal different defects on different surfaces,such as dislocations,grain boundaries,twins,inclusions and precipitation,etc.,and the etched surfaces are in high qualities.Holding this in hand,we also analyze the shape and distribution of defects in the HgMnTe crystals grown by ACRT and Bridgman methods.更多还原