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n-Ge中单峰型反常霍尔效应的理论研究
Theoretical Investigation on Anomalous Hall Effect with Single Peak of n\|Ge
【摘要】 理论分析表明不同于n-Ge中双反转型和凹陷型反常霍尔效应,n-Ge 中的单峰型反常霍尔效应是由于样品中的反型区形成一逾渗集团.在此基础上的定量计算结果与Konorova 的实验结果相当一致
【Abstract】 It is pointed out that the anomalous Hall effect with single peak of n\|Ge resulted from the percolation cluster formed by inversion regions. From this model the calculated results are in good agreement with Konorova′ experimental results.
- 【文献出处】 半导体学报 ,CHINESE JOURNAL OF SEMICONDUCTORS , 编辑部邮箱 ,1999年09期
- 【分类号】O475
- 【下载频次】59