【摘要】 我们利用分子束外延（ Ｍ Ｂ Ｅ）技术在 Ｇａ Ａｓ（００１）衬底上生长 １８ 个原子层的 Ｉｎ Ａｓ，形成了纳米尺寸的 Ｉｎ Ａｓ 量子点．对 Ｉｎ Ａｓ 量子点进行原子力显微镜（ Ａ Ｆ Ｍ ）测量，得到了量子点的高度和横向尺寸的统计分布以及量子点的测量形貌特征．并且对测量结果利用简单的模型进行了误差的分析更多还原

【Abstract】 Atomic force microscopy (AFM) measurements of nanometer islands formed by 1.8 monolayers InAs by molecular beam epitaxy have been carried out. The statical distribution of lateral size and height of the grown dots was obtained by the computer programm. A simple model is proposed to analyze the deviation of the measured value from the real value of the base\|width of InAs islands.更多还原