【摘要】 对微波肖特基中、低势垒二极管硅化物的工艺技术进行了研究。用Ｎｉ－Ｓｉ硅化物作中势垒硅化物， 用Ｔｉ－Ｓｉ硅化物作低势垒硅化物。通过设计和工艺实验， 得到温度、时间、真空度等最佳工艺技术条件。在保持微波肖特基二极管势垒特征的同时， 提高了反向电压， 增强了它的稳定性和可靠性更多还原

【Abstract】 This paper describes techniques research of microwave schottky silicide barrier diodes.The silicide of Ni Si system is used for medium barrier diodes and the silicide of Ti Si system is used for low barrier diodes.By calculating,experimenting and analysing,all constructive parameters and the best technical conditions such as temperature,time,vacuity were obtained.Based on the research,the reverse voltage of the schottky barrier has been raised and the characteristics of the schottky barrier is not changed.In addition,reliability and steadiness are well.更多还原