【摘要】 再次分析了间接耦合光探测器耦合系数定义的自相矛盾,指出这种器件的耦合区实际上是表面耗尽区,或者是表面反型层区,并说明这种器件结构本质上是一种MOS场效应结构。更多还原

【Abstract】 Further analysis is made on the self-contradiction of the definition of the coupling coefficient in indirect coupling photodetectors.In fact,the coupling region in the indirect coupling photodetector is the surface depletion layer region or the surface converse type layer region. It is believed that the structure of the indirect photodetector is a kind of MOS field effect structure.更多还原