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ZnCdTe-ZnTe多量子阱的谱线增宽
Spectrum line broadening in ZnCdTe-ZnTe multiple quantum well
【摘要】 通过对Zn xCd1 - xTe- ZnTe 多量子阱的光致发光研究,讨论了该材料的谱线增宽效应。指出材料阱层的组分涨落是激子谱线非均匀增宽的主要来源,而由流体力学性质决定的涨落,在组分张落中起着非常重要的作用。
【Abstract】 Based on the study of Zn x Cd 1- x Te-ZnTe multiple quantum well,we have investigated the effects of its spectrum line broadening.It is demonstrated that the compositional fluctuation is the main cause of inhomogeneous broadening,whereas the fluid-dynamics-dependent fluctuation plays a very important role in the compositional one.
【关键词】 多量子阱;
激子;
非均匀增宽;
组分涨落;
【Key words】 multiple quantum well; exciton; inhomogeneous broadening; compositional fluctuation;
【Key words】 multiple quantum well; exciton; inhomogeneous broadening; compositional fluctuation;
【基金】 空军基础理论课题资助项目!(KJ9801)
- 【文献出处】 半导体光电 ,SEMICONDUCTOR OPTOELECTRONICS , 编辑部邮箱 ,1999年06期
- 【分类号】TN304.22
- 【下载频次】37