【摘要】 采用有效质量框架下一维有限深单阱的Ｋｒｏｎｉｇ － Ｐｅｎｅｙ 模型对ＩｎＡｓｙＰ１ － ｙ／Ｉｎ１ － ｘＧａｘＡｓｙＰ１ － ｙ 量子阱结构的跃迁波长与组分及阱宽间的关系进行了计算，并采用能量平衡模型计算了此材料体系的生长临界厚度。计算结果表明，ＩｎＡｓｙＰ１ － ｙ／Ｉｎ１ － ｘ ＧａｘＡｓｙＰ１ － ｙ 是制作１ ．３ μｍ 或１ ．５５ μｍ 波长量子阱激光器的良好材料体系，此材料体系在２ ～３ μｍ 的中红外波段也有很大潜力。采用ｙ 约为０ ．４ 的组分和约１ ．３ ％ 的压应变可以满足１ ．３ μｍ 波长激光器的要求， 而ｙ 约为０ ．５５ 的组分和约１ ．８ ％ 的压应变可以满足１ ．５５ μｍ 波长激光器的要求。更多还原

【Abstract】 Subband transition calculation of InAs y P 1- y /In 1- x Ga x As y P 1- y quantum well structures has been made by using Kronig-Peney model under effective mass frame. The critical layer thickness of this material system has also been calculated based on energy balance model. Results show that InAsP/InGaAsP is not only a suitable material system for quantum well lasers with wavelength of 1.3 μm and 1.55 μm,but also a potential material system for 2～3 μm mid-infrared spectral range. The composition y and compressive strain of the well should be about 0.4 and 1.3% for 1.3 μm wavelengths respectively,whereas these should be about 0.55 and 1.8% for 1.55 μm wavelength,respectively.更多还原