【摘要】 系统地介绍了用圆形传输线模型（ Ｃ Ｔ Ｌ Ｍ） 测量金属／ 半导体欧姆接触电阻率的基本原理。以 Ａｌ／ Ｓｉ 接触为例研究了不同掺杂浓度和不同温度退火对接触特性和接触电阻率ρ Ｃ 的影响。测量得到 Ａｌ／ Ｓｉ 欧姆接触电阻率的最小值约为２ ．４ ×１０ － ５ Ω·ｃｍ ２ 。更多还原

【Abstract】 The method using circular transmission line model (CTLM) to measure the specific contact resistance ( ρ C) between metals and semiconductors is presented in this paper. The specific contact resistance of various samples with different doping concentration has been measured before and after annealing. The lowest ρ C reaches 2.4×10 -5 Ω·cm 2.更多还原