【摘要】 讨论了半导体材料中子嬗变掺杂（ Ｎ Ｔ Ｄ） 诱生缺陷的三种原因，即快中子辐射损伤、原子蜕变β辐射及γ辐射反冲造成的位移损伤。简述了由它们引起的缺陷的特性、常用的鉴别手段及相应的退火方法更多还原

【Abstract】 Causes for defects induced by neutron transmutation doping in semiconductors are analysed,such as radiation damage of fast nentrons,β radiation of atom trasmutation,and displacement damage resulted from γ radiation recoil.Features of the defects and commonly used identification techniques are also described as well as corresponding annealing measurements.更多还原