【摘要】 报道了在硅基上用简便的真空反应法制备出 Ｇａ Ｎ 外延层，并对其发光特性进行了研究。发现衬底晶向、生长温度和退火均会对 Ｇａ Ｎ 外延层的发光特性产生影响。 Ｓｉ（１１１） 衬底比 Ｓｉ（１００） 衬底更有利于 Ｇａ Ｎ 外延层的单色发光。退火使 Ｇａ Ｎ 外延层的发光强度降低。在１ ０５０ ℃下生长的 Ｇａ Ｎ 外延层的发光强度高于其他温度下生长的 Ｇａ Ｎ 外延层的发光强度更多还原

【Abstract】 GaN epilayers grown on Si substrates by a novel vacuum reaction method is reported.The effect of substrate orientation, growth temperature and annealing process on the photoluminescences of GaN epilayers is investigated. It is found that Si(111)substrate is beneficial to the monochromic photoluminescence(PL) from the GaN epilayer. Annealing decreases the intensity of PL while the intensity of PL for GaN epilayer grown at 1 050 ℃ exhibits the highest.更多还原