节点文献
微波砷化镓晶体管非线性和噪声一体化建模方法
A Generalized Bias Noise Modeling Method for Microwave GaAs Transistors
【作者】 罗奕; 毛书漫; 马淑佼; 王鹏; 叶金坤; 丁霄; 徐跃杭;
【Author】 Yi Luo;Shuman Mao;Shujiao Ma;Peng Wang;Jinkun Ye;Xiao Ding;Yuehang Xu;Yangtze Delta Region Institute (Huzhou),University of Electronic Science and Technology of China;University of Electronic Science and Technology of China;
【机构】 电子科技大学长三角研究院(湖州); 电子科技大学;
【摘要】 针对传统EEHEMT模型中缺乏非线性和噪声的统一建模方法,难应用于射频前端多功能芯片的一体化设计。对此,本文提出了一种非线性和噪声一体化建模方法,在EEHEMT非线性模型基础上,通过将其非线性电容Cgs模型和跨导模型gm模型替代原噪声模型方程中的对应单偏置参数,并结合二维规范分段线性函数(Canonical Section-Wise Piecewise Linear, CSWPL)优化关键噪声模型参数偏置相关性表征。最终实现了晶体管的非线性和噪声一体化建模。实验表明,模型对于大信号增益精度达97.7%,输出功率精度达97.4%,噪声参数平均精度达93.9%,验证了本文所提出的非线性和噪声一体化建模方法的有效性。
【Abstract】 In traditional EEHEMT models,the lack of a unified modeling approach for nonlinearity and noise makes them difficult to apply to the integrated design of multifunctional chips for RF front-ends.To address this issue,this paper proposes a unified modeling method for nonlinearity and noise.Based on the EEHEMT nonlinear model,the corresponding single-bias parameters in the original noise model equations are replaced by the nonlinear capacitance and transconductance models.Furthermore,the two-dimensional Canonical Section-Wise Piecewise Linear(CSWPL) function was used to optimize the bias correlation characterization of key noise model parameters.Finally,the integrated modeling of nonlinearity and noise is realized.The experimental results show that the model achieves 97.7% accuracy for large signal gain,97.4% accuracy for output power and 93.9% accuracy for average noise parameters,which verifies the effectiveness of the nonlinear and noise integrated modeling method proposed in this paper.
- 【会议录名称】 2025年全国微波毫米波会议报告集-WP3T
- 【会议名称】2025年全国微波毫米波会议(2025年中国微波周)
- 【会议时间】2025-05-19
- 【会议地点】中国陕西西安
- 【分类号】TN386
- 【主办单位】中国电子学会