【作者】 赵俊哲； 周亮；

【Author】 Junzhe Zhao;Liang Zhou;Shanghai Jiao Tong University;

【机构】 上海交通大学；

【摘要】 本文介绍了一种W波段基于硅基MEMS异质异构集成多层布线工艺的宽带互连结构。针对硅基系统与PCB界面的异质异构图形提出空气桥互连方案,设计了一种集成一体化的转接方式。采用标准的PCB工艺设计加工垂直转接结构,并嵌入集成至硅基系统中。大幅提高了传输带宽,减少互连损耗。该传输结构的3-dB带宽为79GHz到108GHz,相对带宽为31%。测试结果与仿真结果吻合。更多还原

【Abstract】 This paper presents a W-band broadband interconnection structure based on silicon-based MEMS technology. For interface of the silicon-based system and PCB substrate, an integrated transfer mode is designed. The standard PCB process was used to design the vertical transition structure which embedded into the silicon-based system. This work greatly increases the transmission bandwidth and reduces the insert loss. The 3-dB bandwidth of the transition structure is from 79GHz to 108GHz, with a relative bandwidth of 31%. The measurement results agree with the simulation results.更多还原