【作者】 黄旭涵； 张铁笛； 张勇； 范超； 姜丹丹；

【Author】 Huang Xuhan;Zhang Tiedi;Zhang Yong;Fan Chao;Dandan Jiang;School of Electronic Science and Engineering,UESTC;Chengdu Corpro Technology Co.,Ltd;Chengdu University of Information Technology;

【机构】 电子科技大学电子科学与工程学院； 成都振芯科技股份有限公司； 成都信息工程大学,通信工程学院；

【摘要】 本文基于0.15μm GaAs PHEMT工艺,介绍了一款工作在2-18GHz频段的低噪声放大器,该款放大器采用分布式结构,晶体管采用共源共栅结构以提高高频增益,同时为提高电路稳定性,在共栅管的栅极串联小阻值电阻。仿真结果表明:在工作频段内增益大于15.9dB,增益平坦度在±0.5dB内,噪声系数小于3.5dB,电路面积为:2.7mm~2。更多还原

【Abstract】 Based on 0.15μm GaAs PHEMT process, a low noise amplifier working in 2-18GHz frequency band is designed in this paper. A distributed architecture is used and a cascade configuration was utilized to enhance the high frequency gain.The grid of the common gate tube is connected in series with small resistance to enhance the stability of the circuit. The simulation results show that the gain is greater than 15.9dB, the gain flatness is within ±0.5dB, the noise factor is less than 3.5dB, and the circuit area is 2.7mm~2.更多还原