【作者】 刘睿佳； 朱晓维； 于志强； 周健义； 洪伟；

【Author】 LIU RuiJia;ZHU Xiaowei;YU Zhiqiang;ZHOU Jianyi;HONG Wei;School of Information Science and Engineering,Southeast University;

【机构】 东南大学信息科学与工程学院；

【摘要】 针对5G毫米波频段应用,本文提出了一种基于混合匹配技术的4W氮化镓单片微波集成电路(MMIC)功率放大器。匹配电路采用集总参数电容及分布参数电感进行物理实现,进一步降低匹配网络的插入损耗水平及网络的物理尺寸。放大器采用0.15μm GaN-HEMT on SiC工艺进行设计。实验结果表明,在23.5至27 GHz频带范围内,可获得33.1-35.6 dBm的饱和功率,25%-33.5%的饱和功率附加效率(PAE),以及高于10.3%的8-dB回退PAE。更多还原

【Abstract】 A millimeter-wave 4 W GaN monolithic microwave integrated circuit(MMIC) power amplifier based on hybrid matching technology for the coming 5 G millimeter-wave system applications is proposed in this paper.The matching circuit is realized by lumped parameter capacitance and distributed parameter inductance,which further reduces the insertion loss level and physical size of the output matching network.The amplifier is designed using a commercial 0.15 μm GaN-HEMT on SiC process.The experimental results show that 33.1～35.6 dBm saturation power,25%～35.5% saturation power added efficiency(PAE) and more than 10.3% 8 dB power back-off PAE can be obtained in the 23.5～27.5 GHz frequency band.更多还原