【作者】 王祖军； 薛院院； 贾同轩； 杨勰； 何宝平； 马武英； 姚志斌； 盛江坤； 缑石龙；

【Author】 WANG Zu-jun;XUE Yuan-yuan;JIA Tong-xuan;YANG Xie;HE Bao-ping;MA Wu-ying;YAO Zhi-bin;SHENG Jiang-kun;GOU Shi-long;Northwest Institute of Nuclear Technology,State Key Laboratory of Intense Pulsed Radiation Simulation and Effect;School of Materials Science and Engineering,Xiangtan University;Xi’an Research Institute of High-Technology;

【机构】 强脉冲辐射环境模拟与效应国家重点实验室(西北核技术研究所)； 湘潭大学材料科学与工程学院； 西安高科技研究所；

【摘要】 开展了0.18μm工艺制造的钳位二极管（PPD）CMOS图像传感器（CIS）⁶⁰Co伽马射线瞬态效应辐照实验研究。分析了PPD CIS ⁶⁰Co伽马射线瞬态效应的典型特征和物理机制,研究了PPD CIS在辐照剂量率分别为0.01、0.02、0.05、0.1、0.2、0.3rad（Si）/s及不同积分时间下（1.02到20.51ms）下的瞬态效应辐照实验规律。实验结果表明:在相同的积分时间下,PPD CIS的暗场平均输出信号随辐照剂量率增大而近似线性增大;在相同的辐照剂量率下,PPD CIS的暗场平均输出信号随积分时间增大而近似线性增大;当辐照剂量率和积分时间乘积相同时,PPD CIS辐照时的暗场输出信号分布接近。更多还原

【Abstract】 The radiation experiments of transient effects in PPD CMOS image sensors(CISs) with a standard 0.18 μm CMOS technology are presented.The transient response characteristics of the PPD CISs induced by gamma radiation present a transient disturbance and a random signal distribution.The transient responses induced by gamma radiation at the dose rates of 0.01,0.02,0.05,0.1,0.2,0.3 rad(Si)/s are compared to analyze the influence of dose rates.The transient responses of the PPD CISs at different integration times ranged from 1.02 to 20.51 ms during radiation are also analyzed.The experimental results show that the mean signal levels increase linearly with increasing dose rates or integration times during radiation.The signal distributions induced by gamma rays at the same products of the dose rates and integration times are very closely.更多还原