Pressure-induced metallic phase transition in gallium arsenide up to 24.3 GPa under hydrostatic conditions

【作者】 张新觎； 代立东； 胡海英； 洪梅玲；

【机构】 中国科学院地球内部物质高温高压重点实验室中国科学院地球化学研究所； 中国科学院大学；

【摘要】 <正>A series of researches on the structural, vibrational and electrical transport characterizations for gallium arsenide (GaAs) were conducted up to 24.3 GPa under hydrostatic conditions in a diamond anvil cell in conjunction with in-situ Raman scattering spectroscopy, electrical conductivity measurements, high-resolution transmission electron microscopy and atomic force microscopy. Upon compression, a phase transition from the zinc-blende (zb) to orthorhombic (Cmcm) structure in GaAs was observed at the pressure of 12.2 GPa in the light of all of these discontinuous variations in the Raman shifts,更多还原