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TiAl靶高功率脉冲磁控溅射放电特性及TiAlN薄膜性能研究
Research on Discharge Behavior of High Power Impulse Magnetron Sputtering of TiAl Target and Properties of TiAlN Films
【作者】 毕明康; 高俊峰; 田修波; 刘华杰; 巩春志; 杨士勤;
【Author】 Bi Mingkang;Tian Xiubo;Gong Chunzhi;Yang Shiqin;State Key Laboratory of Advanced Welding and Joining,Harbin Institute of Technology;
【机构】 哈尔滨工业大学先进焊接与连接国家重点实验室;
【摘要】 研究了TiAl合金靶高功率脉冲磁控溅射(HIPIMS)放电特性,采用高功率脉冲磁控溅射(HIPIMS)制备TiAlN薄膜,并研究了工作气压和脉冲电压对膜层形貌、组织结构和力学性能的影响。结果表明,在脉冲放电过程中,靶脉冲峰值电流随脉冲电压的增大而线性增加,随复合直流的增大而降低;氮氩流量比对靶脉冲峰值电流的影响与氮气加入方式有关,保持总流量不变时,靶脉冲峰值电流随氮气流量的增大先增加后降低,保持氩气流量不变而增加氮气流量时,靶脉冲峰值电流随氮气流量增大而线性增加。采用HIPIMS制备的TiAlN薄膜结构非常致密、无缺陷,常规磁控溅射出现的柱状晶基本消失,XRD结果表显示,薄膜主要以(200)晶面择优生长。在工作气压0.6Pa、脉冲电压800V时制备薄膜的耐摩擦磨损性能最好,膜基结合力最高。
【Abstract】 Discharge behavior of high power impulse magnetron sputtering(HIPIMS) system of TiAl target was investigated.TiAlN films were deposited by HIPIMS and the effects of working pressure and pulse voltage on morphology,structure and mechanical properties were studied.The results show that the peak pulse current increases linearly with increasing pulse voltage,but decreases with the increase of hybrid DC current in the process of impulsive discharge.The influence of N2/Ar flow ratio on peak pulse current is related to the methods of adding nitrogen.If keep total flow constant,the peak pulse current increases first and then decreases with increasing pulse voltage,if keep Ar flow constant and increase the N2 flow,the peak pulse current increases linearly.The surfaces of TiAlN films prepared by HIPIMS are smoother and denser,and no cavities and large-particles existed.The grains of the coatings grow with preferred orientations of TiAlN(200).TiAlN films have the best wear-resistance,lowest friction coefficient and highest adhesion at the pressure of 0.6 Pa and pulse voltage of 800 V.
【Key words】 HIPIMS; TiAl target; discharge characteristics; TiAlN;
- 【会议录名称】 TFC’13全国薄膜技术学术研讨会论文摘要集
- 【会议名称】TFC’13全国薄膜技术学术研讨会
- 【会议时间】2013-10-13
- 【会议地点】中国浙江宁波
- 【分类号】TB383.2
- 【主办单位】中国真空学会薄膜专业委员会