石墨烯表面后处理优化及其在碳基真空纳米晶体管中的应用

【作者】 黄杰； 王琦龙； 张晓兵； 徐季； 翟雨生； 张建； 齐志央；

【机构】 东南大学电子科学与工程学院；

【摘要】 缺省真空封装条件下,电子主要以弹道输运的方式在真空纳米间隙沟道中传输,极大地提高了器件结构小型化和集成化的可行性。作为满足高速宽频信息系统应用需求的高迁移率和导热系数二维电子气材料,石墨烯在基于纳米间隙沟道的真空纳米三极管器件中具有天然的优势。本文提出了利用超声清洗结合热退火的方式对转移后石墨烯材料进行优化处理,优化处理后的石墨烯表面破裂与褶皱明显减少,转移杂质基本去除,石墨烯的电学性能明显提升。随后利用电子束光刻(Electron Beam lithography, EBL)和氧等离子体刻蚀等工艺,制备了基于石墨烯的平面型真空纳米间隙沟道三极管。在原位测试系统中,通过调节栅压,该真空沟道晶体管可在低工作电压(<20V)和漏电流(<0.5nA)下实现高达102的开/关电流比。更多还原

【Abstract】 Electrons could ballisitically transport through the nanogap channel without vacuum packaging, which greatly improves the feasibility of miniaturization and integration. With the property of atomic thick layer, high mobility and thermal conductivity, graphene owns inherent advantages in high speed broadband information systems. This paper presents the optimization of grapheme surface damage and adhesive residue by ultrasonic cleaning and thermal annealing. After the optimization, the results show that the cracks and wrinkles were significantly reduced. A planar vacuum nanogap channel transistor is successfully fabricated based on graphene by electron beam lithography(Electron Beam lithography, EBL) and oxygen plasma etching. In the in-situ test system, by modulating the gate voltage, the transistor can switch from off-state to on-state and achieve an on/off current ratio of up to 102 with low operating voltage and leakage current.更多还原