【作者】 刘超； 于莉媛； 王志刚； 钱森； 夏经铠； 朱纳； 高峰； 安广朋； 马毅超； 党宏社； 吴英蕾； 杨洁；

【Author】 LIU Chao;YU Li Yuan;WANG Zhi Gang;QIAN Sen;XIA Jing Kai;ZHU Na;GAO Feng;AN Guangpeng;MA Yichao;DANG Hong She;WU Yin Lei;YANG Jie;Tianjin Polytechnic University;State Key Laboratory of Particle Detection and Electronics;Institute of High Energy Physics,Chinese Academy of Sciences;University of Chinese Academy of Sciences;Shaanxi University of Science and Technology;

【机构】 天津工业大学； 核电子学与和探测器国家重点实验室； 中国科学院高能物理研究所； 中国科学院大学； 陕西科技大学；

【摘要】 文中对高能电子辐照对GaN基蓝光LED光电学性能的影响进行研究。高能电子束流分别对不同组别的LED样品进行辐照实验,并通过自动测控系统对辐照过程中LED的电流、光强、光谱峰值波长进行全程测控。随后,在室温无辐照环境下对上述不同组别的LED样品进行跟踪对比测试研究。实验结果表明:高能辐照对LED的改性有明显效果,具体表现在工作电流和发光功率变化趋势不同,光谱峰值波长的蓝移情况也不同。同时,GaN基LED在辐照过程中是否通电对LED的光电学性能有显著影响。更多还原

【Abstract】 The performance of the GaN-based LED will be affected by the gamma, neutron and electron radiation. To study the impact of high-energy electron radiation on photoelectric properties of GaN-based LED, some samples were setup in the beam line for electron radiation. The current, light power and emission wavelength of the irradiating LED were monitored by an automatic monitoring and control system during the beam time. And also the aging test of these LED samples was finished. The current, the light powder stability of each samples were different with the different electron radiation. Also luminescence wavelength of some sample were has a certain blue shift phe-menon. High-energy radiation has obvious effect on the photoelectric properties of the GaN-based LED.更多还原