【作者】 袁媛； 刘书焕； 龙彪； 刘晓波； 李浩伟； 张国和； 杜雪成； 贺朝会；

【Author】 YUAN Yuan;LIU Shuhuan;LONG Biao;LIU Xiaobo;LI Haowei;ZHANG Guohe;DU Xuecheng;HE Chaohui;Xi’an Jiaotong University;

【机构】 西安交通大学；

【摘要】 根据三维Si SOI PIN像素微剂量探测器特性参数,设计了一种基于GF chrt018IC CMOS工艺的低功耗、低噪声前端读出电路。该读出电路主要包括电荷灵敏前放(CSP)、极零相消(P-Z)、有源二阶滤波网络(CR-RC~2)以及峰值保持电路和漏电流补偿等结构,总体实现了对探测器输出电荷信号的积分与放大、滤波整形、峰值保持等功能。采用PMOS单端输入的折叠共源共栅放大器作为电荷灵敏前放的核心运放,峰值保持电路包括PMOS电流镜构成的整流器与简单跨导放大器以及保持电容。设计完成的读出电路动态范围为5fC～500fC,电路灵敏度约为63mV/MeV,单通道功耗低于3mW,信噪比远大于20。更多还原

【Abstract】 According to the characteristic parameters of the 3 D Si SOI PIN pixel microdosimeter, a low noise, low power front-end readout circuits based on GlobalFoundries chrt018 IC CMOS technologywas designed in this work. The circuit consisits of a charge sensitive preamplifier(CSP), active second-order filter network,and peak detect and sample hold circuits(PDSH) and leakage current compensation and so on. It overall realizes the function of amplification, filtering and maintaining the amplitude peak of the radiation charge signals from the SOI detector. The core amplifier of the CSP is based on a classical folded cascode amplifier with a PMOS type input transistor. Peak hold circuit includes a pair of PMOS current mirror as rectifier, a simple transconductance amplifier and a hold capacitance. The designed dynamic range of the readout circuitsis 5 fC～500 fC with the sensitivity of 63 mV/MeV. The single channel dissipation is less than 3 mW and the signal noise ratio is greater than 20.更多还原