节点文献

AACVD方法制备FTO薄膜及F掺杂浓度对薄膜光电性能影响的研究

Effects of F Doping Concentration upon the Photoelectric Properties of FTO Films Prepared by AACVD Method

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 马晔城林威豪陈胜男汪建勋刘涌宋晨路韩高荣

【Author】 MA Ye-cheng;LIN Wei-hao;CHEN Sheng-nan;WANG Jian-xun;LIU Yong;SONG Chen-lu;HAN Gao-rong;State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University;

【机构】 浙江大学材料科学与工程学系硅材料国家重点实验室

【摘要】 采用超声雾化辅助气相化学沉积方法,以单丁基三氯化锡为Sn源,氟化铵为F源掺杂剂,在普通浮法白玻上均匀制备了F:SnO2(FTO)透明导电薄膜。采用X射线衍射、扫描电镜、紫外可见光谱、傅里叶红外光谱、四探针等测试方法分析样品,研究了溶剂种类、F掺杂浓度对FTO薄膜微观结构形貌和光电性能的影响。研究结果表明甲醇相较于乙醇作为溶剂,可以更为有效的提高F的掺入效率;随着F掺杂浓度从0提高到0.015 mol/L,薄膜样品的可见光平均透过率从70%下降到50%,方阻从94.25Ω下降到2.95Ω,辐射率从0.71下降到0.26;但当F掺杂浓度继续提高时,薄膜的光电性能和低辐射性能反而下降。

【Abstract】 F:SnO2(FTO) transparent conductive films were prepared on float white glass by ultrasonic atomization assisted chemical vapor deposition method,using butyl three tin chloride as Sn source and ammonium fluoride as F source dopant.We used X ray diffraction,scanning electron microscopy,UV visible spectroscopy,Fourier infra-red spectrum and four probe testing method to characterize the samples.The effects of solvent types and F doping concentration upon the microstructure and photoelectric properties of FTO films were discussed.The results show that compared with ethanol,methanol can more effectively improve the doping efficiency of F.And with the F doping concentration increasing from 0 to 0.015 mol/L,the average visible transmittance of film samples decreased from70%to 50%,the square resistance decreased from 94.25 Ω to 2.95 Ω,the emissivity decreased from0.71 to 0.26.But when the nominal doping concentration of F increases over 0.015 mol/L,the photoelectric properties and emittance of the as-prepared FTO deteriorated.

【基金】 “十三五”国家重点研发计划课题(2016YFB0303902)
  • 【会议录名称】 2017年全国玻璃科学技术年会论文集
  • 【会议名称】2017年全国玻璃科学技术年会
  • 【会议时间】2017-08-27
  • 【会议地点】中国河北秦皇岛
  • 【分类号】TB383.2
  • 【主办单位】中国硅酸盐学会玻璃分会
节点文献中: 

本文链接的文献网络图示:

本文的引文网络