【作者】 马晔城； 林威豪； 陈胜男； 汪建勋； 刘涌； 宋晨路； 韩高荣；

【Author】 MA Ye-cheng;LIN Wei-hao;CHEN Sheng-nan;WANG Jian-xun;LIU Yong;SONG Chen-lu;HAN Gao-rong;State Key Laboratory of Silicon Materials,School of Materials Science and Engineering,Zhejiang University;

【机构】 浙江大学材料科学与工程学系硅材料国家重点实验室；

【摘要】 采用超声雾化辅助气相化学沉积方法,以单丁基三氯化锡为Sn源,氟化铵为F源掺杂剂,在普通浮法白玻上均匀制备了F:SnO₂（FTO）透明导电薄膜。采用X射线衍射、扫描电镜、紫外可见光谱、傅里叶红外光谱、四探针等测试方法分析样品,研究了溶剂种类、F掺杂浓度对FTO薄膜微观结构形貌和光电性能的影响。研究结果表明甲醇相较于乙醇作为溶剂,可以更为有效的提高F的掺入效率;随着F掺杂浓度从0提高到0.015 mol/L,薄膜样品的可见光平均透过率从70%下降到50%,方阻从94.25Ω下降到2.95Ω,辐射率从0.71下降到0.26;但当F掺杂浓度继续提高时,薄膜的光电性能和低辐射性能反而下降。更多还原

【Abstract】 F:SnO₂（FTO） transparent conductive films were prepared on float white glass by ultrasonic atomization assisted chemical vapor deposition method,using butyl three tin chloride as Sn source and ammonium fluoride as F source dopant.We used X ray diffraction,scanning electron microscopy,UV visible spectroscopy,Fourier infra-red spectrum and four probe testing method to characterize the samples.The effects of solvent types and F doping concentration upon the microstructure and photoelectric properties of FTO films were discussed.The results show that compared with ethanol,methanol can more effectively improve the doping efficiency of F.And with the F doping concentration increasing from 0 to 0.015 mol/L,the average visible transmittance of film samples decreased from70%to 50%,the square resistance decreased from 94.25 Ω to 2.95 Ω,the emissivity decreased from0.71 to 0.26.But when the nominal doping concentration of F increases over 0.015 mol/L,the photoelectric properties and emittance of the as-prepared FTO deteriorated.更多还原