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高品质石墨烯的控制生长与光电器件

Controlled growth and optoelectronic devices of high-quality graphene

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【作者】 彭海琳

【Author】 Hailin Peng;Center for Nanochemistry,College of Chemistry and Molecular Engineering,Peking University;

【机构】 北京大学化学与分子工程学院

【摘要】 石墨烯具有特殊的单原子层晶体结构和狄拉克锥形电子能带结构,展示出优异的电学、热学、光学和力学性质及广阔的应用前景。对石墨烯薄膜材料的控制生长、能带调控与新型光电器件开展深入的研究具有重要意义。本报告将介绍我们最近开展的高品质石墨烯大单晶与薄膜的表面控制生长、卷对卷宏量制备与无损转移、可控掺杂、光电检测器件以及透明柔性导电薄膜应用等方面的研究,最后对石墨烯在未来电子器件和光电器件方面的应用前景进行展望。

【Abstract】 Graphene is a single layer of hexagonal carbon framework with high Young’s modulus, extraordinary electronic and optical properties. High-quality graphene thin film is attractive to fundamental research as well as applications in electronics, photonics, and energy sciences. Here our recent studies on the controlled growth, selectively doping, chemical modification, and photoelectric conversion properties of high-quality graphene and its hybrid materials will be discussed: 1) We are working on fast growth of large-area graphene single crystals; 2) We have achieved the mass production of graphene film via continuous roll-to-roll chemical vapor deposition and nondestructive lamination transfer process; 3) We have successfully incorporated a modulation doping technique for effective nitrogen or boron doping of graphene, yielding high quality hybrid graphene film with lateral p-n junctions capable of efficient photocurrent generation. 4) We demonstrated that twisted bilayer graphene(tBLG) with twist-angle dependent van Hove singularities exhibits a strong light-matter interaction and selectively enhanced photocurrent generation; 5) We fabricated graphene-based vertically stacked van der Waals heterostructure for novel optoelectronic devices.

  • 【会议录名称】 中国化学会第30届学术年会摘要集-第三十九分会:纳米碳材料
  • 【会议名称】中国化学会第30届学术年会-第三十九分会:纳米碳材料
  • 【会议时间】2016-07-01
  • 【会议地点】中国辽宁大连
  • 【分类号】TQ127.11
  • 【主办单位】中国化学会
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