【作者】 刘光波； 陈晓爽； 郑威； 冯伟； 李中华； 胡平安；

【Author】 Liu Guangbo;Chen Xiaoshuang;Zheng Wei;Feng Wei;Li Zhonghua;Hu Ping An;Key Lab of Microsystem and Microstructure of Ministry of Education,Harbin Institute of Technology;School of Chemistry and Chemical Engineering,Harbin Institute of Technology;

【机构】 哈尔滨工业大学微系统与微结构教育部重点实验室； 哈尔滨工业大学化工与化学学院；

【摘要】 目前,二维材料光电极主要是通过将液相剥离的样品旋涂于导电衬底而制得。本文,我们通过改良的化学气相沉积法直接在导电衬底上首次实现了可控制备大规模垂直生长的SnS₂纳米片。在光电化学测试中发现,SnS₂纳米片光电极在360 nm波长光照下的光电转换效率达到了42.07%,1.5 V下的光电流密度达到了3.62 mA/cm²,分别是其块体SnS₂性能的15倍和114倍。该工作为设计和制备具有高光电化学性能的二维层状金属硫化物光电极提供了新思路。更多还原

【Abstract】 To date, deposition of exfoliated 2D nanosheet suspensions onto conductive substrates by a variety of techniques is the mostly exploited approach to fabricate photoelectrodes from these materials. Herein, we demonstrate, for the first time, wafer-scale growth of vertically aligned 2D SnS₂ nanosheets with controlled density on conductive substrates by a modified chemical vapor deposition（CVD） method. In PEC measurements, this 2D sheet array photoelectrode exhibits an incident photon to current conversion efficiency（IPCE） up to 42.07%（SnS₂/FTO） at 360 nm and a photocurrent density of up to 3.62 mA /cm²（SnS₂/carbon cloth） at 1.5 V vs. reversible hydrogen electrode（RHE）. These values are 15 and 114 times higher than the bulk counterpart, respectively. Our demonstration of this novel growth strategy offers a versatile framework towards to design and fabrication of high performance PECs based on 2D layered metal chalcogenides.更多还原