【作者】 陈奉云； 国云川； 徐锐敏；

【Author】 CHEN Feng-yun;GUO Yun-chuan;XU Rui-min;The EHF Key Laboratory of Fundamental Science, University of Electronic Science and Technology of China;

【机构】 电子科技大学极高频复杂系统国防重点学科实验室；

【摘要】 基于Ga As肖特基二极管工艺,设计了一款输出频率为8~16GHz的无源二倍频单片微波集成电路(MMIC)。该倍频器的核心是四只性能一致的肖特基势垒二极管构成的桥形堆,输入输出则采用了适于宽带匹配的巴伦结构。把输入信号转化为两路幅度相同,相位相差180°的信号加到肖特基势垒二极管上,从而使其输出偶次谐波,抑制了奇次谐波,再经过输出巴伦有效地抑制了四次等更高次谐波,输出所需的二次谐波信号。当输入功率为15d Bm,在8~16GHz整个倍频段内,输出功率均大于2d Bm,倍频损耗小13d B。对基波和各次谐波的抑制度均大于25d Bc。芯片尺寸为1.3mm×1.3mm。更多还原

【Abstract】 Based on the Ga As Schottky diode technology,a passive frequency doubler monolithic microwave integrated circuit( MMIC) was developed, whose output frequency is within 8~16GHz.The core of the frequency doubler is a Schottky-barrier diode bridge quad which consists of four good consistent diodes. Balun that is proper with wide-band matching are used at both the input and output ports. The broadband doubler outputted even harmonic and effectively rejected odd harmonic by a signal to two-way signals with equal amplitude and antiphase then applied to the pair diode, and the desired second harmonic signal can be obtained via the output Balun which can effectively reject higher harmonic signals like 4th harmonic. The results show that the output power is larger than 2 d Bm, the conversion loss is less than 13 d B and each harmonic and fundamental frequency suppression is larger than 25 d Bc at the output frequency from 8 GHz to 16 GHz, when the input power is 15 d Bm. The chip size is 1. 3 mm×1.3 mm..更多还原