【作者】 赵君赫； 国云川；

【Author】 ZHAO Jun-he;GUO Yun-chuan;Fundamental Science on EHF Laboratory,University of Electronic Science and Technology of China;

【机构】 电子科技大学极高频复杂系统国防重点学科实验室；

【摘要】 基于TSMC 65nm CMOS工艺,提出了一种低噪声、低功耗的10Gb/s光通信接收机跨阻前置放大器(TIA)设计。该TIA采用1.2V低电压供电,没有采用电感以大幅度减小芯片面积,可稳定工作于10Gb/s速率。当光电二极管电容为250fF时,电路的-3d B带宽为8.5GHz,跨阻增益66d B。平均等效输入电流谱密度约为16p A/√Hz(0~10GHz),总的等效输入噪声电流为1.2u A。该电路功耗为11.7mW,芯片面积仅为115um×120um。更多还原

【Abstract】 A design of low-power and wideband transimpedance pre-amplifier(TIA) was implemented in TSMC 65 nm CMOS process for 10Gb/s high-speed optical communications. With a supply voltage of 1.2V, the area of the TIA circuit is smaller without inductance and it can operate at a bit rate of 10Gb/s stably. The receiver preamplifier circuit is with a transimpedance gain of up to 66 d B and-3d B bandwidth of 8.5GHz,which accommodates a photodiode capacitor of 250 fF. The noise simulation result shows that the average input-referred noise current spectral density is 16 p A/√Hz(0~10GHz), the total equivalent input current noise is 1.2u A. The power dissipation of the chip is 11.7mW and the chip area is only 115um×120um.更多还原