【作者】 戚玉佳； 李永东； 郝勇； 王洪广； 李平； 刘纯亮；

【Author】 QI Yu-jia;LI Yong-dong;HAO Yong;WANG Hong-guang;LI Ping;LIU Chun-liang;Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University;Northwest Institute of Nuclear Technology;

【机构】 西安交通大学电子物理与器件教育部重点实验室； 西北核技术研究所；

【摘要】 为了研究了PIN二极管电热学效应,通过T-CAD软件建立PIN二极管的电热学模型,模拟了PIN二极管的瞬态特性。研究了PIN二极管器件脉冲电压下的电热特性,分析了PIN二极管的载流子浓度与温度的关系,模拟得到了不同载流子浓度下与瞬态响应曲线、得到了与器件内部温度的关系。模拟结果表明:随着载流子浓度增大,器件内部温度增长越快,器件达到失效状态的时间越短。更多还原

【Abstract】 In order to study the PIN diode thermal properties, an electric thermal model of PIN diodes was established with the T-CAD software, the transient characteristics of PIN diodes have been numerically investigated. The electric thermal properties of PIN diodes were simulated under pulse signals with pulse voltage, and the effects of the carrier concentration of the P layer and N layer on the temperature inside the diode were studied with their transient response curves. The results show that, when the carrier concentration of P and N layer increases, the temperature inside the diode increases fast and the device achieves the failure state is short.更多还原