【作者】 罗俞杰； 徐跃杭； 卢啸； 延波； 陈堂胜； 徐锐敏；

【Author】 LUO Yu-jie;XU Yue-hang;LU Xiao;YAN Bo;CHEN Tang-sheng;XU Rui-min;School of Electronic Engineering, University of Electronic Science and Technology of China;Nanjing Electronic Devices Institute;

【机构】 电子科技大学电子工程学院； 南京电子器件研究所；

【摘要】 Ga NHEMT由于同时具有高功率密度和高速度的特点,是国内外学者研究的热点。同时,E类功率放大器具有良好的高效率宽频带的特性,应用前景广泛。本文基于南京电子器件研究所Ga N HEMT器件,开展了Ku波段Ga N E类功率放大器设计研究。针对Ga N HEMT器件较高的输出电容Cds,采用补偿微带的结构减小寄生参数的影响,设计了13.7GHz~14.2GHz的Ga N E类功率放大器。实测表明,该放大器在连续波输入功率25d Bm的情况下,在13.7GHz~14.2GHz频率范围内漏极效率大于36%,输出功率大于30d Bm。更多还原

【Abstract】 High electron mobility transistors(HEMTs) made by Ga N, due to its high power density and high speed features,become hot topics both at home and abroad.At the same time, the class E power amplifier, having a characteristics of high-efficiency and wide band,shows a broad prospect of application.In this article,we choose a Ga N HEMT devices made by Nanjing Electronic Devises Institudeto do some research of Ga N class-E power amplifier.On account of the high output capacitance of Ga N HEMT, we use the compensation microstrip structure to reduce the influence of parasitic parameters,and then designed a Ga N class E power amplifier working at 13.7 GHz ~ 14.2 GHz. The measured data shows that drain efficiency is more than 36%, the output power greater than 30 d Bm when the continuous wave power is 25 d Bm.更多还原