【作者】 蒋勇； 甘雷； 吴健； 范晓强； 邹德慧； 李勐； 鲁艺； 张翼； 代少丰； 荣茹；

【Author】 Jiang Yong;Gan Lei;WU Jian;FanXiao-qiang;CAEP Key Laboratory of Neutron Physics;Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics;

【机构】 中国工程物理研究院中子物理重点实验室； 中国工程物理研究院,核物理与化学研究所；

【摘要】 半导体中子探测器具有能量分辨率高、线性范围广、时间响应快、体积小、工作偏压低等优点。介绍了基于Si-PIN探测器的中子探测原理与结构,对探测器进行了I-V、C-V电学特性参数的测量,利用探测器开展了²²⁶Rn源α粒子能谱测量研究,还利用²⁵²Cf源开展了中子测量研究。当反向偏压为20V探测器全耗尽时,由I-V曲线得出的漏电流为40nA,C-V曲线得到结电容为43pF,探测器对α粒子的最佳能量分辨率为0.68%。在探测器表面增加一块表面镀有6LiF转换层的陶瓷片后,成功测到了中子信号,通过有、无陶瓷片测试结果比较可以很明显区分出中子和γ本底,为后续的中子强度和能谱测量奠定了重要基础。更多还原

【Abstract】 The semiconductor neutron detectors have many advantages such as high energy resolution, wide linear range, fast response time, small size and low power. This paper introduces the principle and structure of Si Positive-Intrinsic-Negative(Si-PIN) detector. For the Si-PIN detector with sensitive area of 20 mm × 20 mm, IV and CV electrical characteristic parameters were measured. α particles energy resolution, energy linear response research and neutron detection research were carried out. The detector is fully depleted at 20 V bias, the leakage current is 40 nA, the junction capacitance is 43 pF and the best energy resolution of α particle is 0.68%. Combining a polyethylene plate on which neutron converter material(~6LiF) is depleted, it successfully measured the neutron signal. According to the t results of the measurement, neutrons and γ background can be clearly distinguished. This work laid an important foundation for the subsequent measurement of neutron intensity and spectrum.更多还原