【作者】 文林； 李豫东； 郭旗； 任迪远； 汪波； 玛丽娅；

【Author】 Lin Wen;Yu-dong Li;Qi Guo;Di-yuan Ren;Bo Wang;Maria;Key Laboratory of Functional Materials and Devices for Special Environments of CAS;Xinjiang Key Laboratory of Electronic Information Materials and Devices;Xinjiang Technical Institute of Physics&Chemistry of CAS;Graduate University of Chinese Academy of Sciences;

【机构】 中国科学院特殊环境功能材料与器件重点实验室新疆电子信息材料与器件重点实验室中国科学院新疆理化技术研究所； 中国科学院大学；

【摘要】 对某国产埋沟科学级CCD进行了10MeV质子辐照试验研究,试验过程中重点考察了器件的暗信号、电荷转移效率特性的变化。结果表明,器件的主要性能参数随着质子辐照注量的增大明显退化,在退火过程中这些参数均有不同程度的恢复。对CCD敏感参数退化规律及其与器件工艺、结构的相关性进行了分析,并推导了参数退化随质子辐照注量变化的经验公式。上述工作可为深入开展CCD抗辐射性能预测、抗辐射工艺改进与结构优化提供重要参考。更多还原

【Abstract】 A sort of homemade buried scientific CCD(Charge Coupled Devices) was injected by 10 MeV proton, and measure was carried out primarily on change of dark signal, non-uniformity of dark signal, charge transfer efficiency, and spectrum characterization. Result of experiment implied that parameters of CCD presented significant decrease. Post-irradiation annealing was processed and revealed different rebound degree in CCD parameters. This paper analysed the mechanism of CCD parameters decrease, and their dependence on process and architecture in manufacture. The results above will provide helpful reference in characterization evaluation and technique development of future CCD.更多还原