【作者】 崔丹丹； 端木庆铎； 王国政； 杨继凯； 李海斌；

【Author】 Cui Dan-dan;DUANMU Qing-duo;Wang Guo-zheng;Yang Ji-kai;Li Hai-bin;School of science, Changchun University of Science and Technology;

【机构】 长春理工大学理学院；

【摘要】 通过湿法腐蚀的方法,以TMAH为腐蚀剂对电化学刻蚀后未通透的硅微通道进行结构释放。针对湿法腐蚀结构释放硅微通道时遇到的问题,以质量浓度为28.5wt%的TMAH溶液分别对不同电阻率的硅片以及SiO₂膜层进行腐蚀,通过不断地调节腐蚀液pH值,研究了腐蚀液pH值变化对硅片的腐蚀特性影响。通过对腐蚀后的样品进行分析,结果发现电阻率大的硅片更容易腐蚀;TMAH溶液对SiO₂膜层腐蚀速率较均匀;与pH值变化的腐蚀液相比,硅片在pH值恒定的腐蚀液中腐蚀效果更好。更多还原

【Abstract】 The silicon microchannel which was not transparent after electrochemical is released in TMAH by wet etching method. In this paper, contrary to the problem encountered in wet etching when released the silicon microchannel, different resistivity silicon and SiO₂ film was etched in TMAH solution of the mass fraction of 28.5wt%, and by constantly adjusting the pH value of etching solution, studied the affect of corrosion properties while etching solution p H value changes. By analyzing the corrosion rate and surface roughness of the sample after etching, found that High-resistivity silicon is more susceptible to corrosion, the corrosion rate of SiO₂ film in TMAH solution is uniform, and compared to the etching solution which p H value changes, the silicon in constant pH value etching solution corrosion better.更多还原