【作者】 张晓发； 吕波； 朱畅； 袁乃昌；

【Author】 ZHANG Xiao-fa;LV Bo;ZHU Chang;YUAN Nai-chang;Microwave Center,NUDT;

【机构】 国防科技大学微波中心；

【摘要】 设计了一个工作在800~1250MHz的宽带线性高功率放大器。用负载牵引方法测试了LDMOS场效应管宽带内的大信号阻抗参数,利用测得的阻抗参数优化设计了功放的匹配电路。实测功放的1d B压缩点输出功率大于44.5d Bm,二次谐波小于-25d Bc,输出功率为38.5d Bm时双音测试三阶交调(IM3)优于-44d Bc。更多还原

【Abstract】 A broadband linear high power amplifier was designed,which operated through the band from 800 MHz to 1250 MHz.A simple load-pull method was used to acquire the input and output impedance parameters of the LDMOS FET in the band. Based on the impedance parameters,the matching networks of the amplifier were designed and optimized. Measured results give the P1 d B output power over 44.5 d Bm, the 2nd harmonic below-25 d Bc, and the IM3 better than-44 d Bc with 2-tone test at 38.5d Bm output power.更多还原