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双电抗补偿技术设计LC并联宽带E类功放
the Design of Broadband LC Paralled-Circuit Class E Power Amplifiers Using Double Reactance Compensation Technique
【Author】 Rong Chuicai;Xu Yuehang;Xia Mingyao;Liu Xiansuo;Xu Ruiming;Fundamental Science on EHF Laboratory,University of Electronic Science and Technology of China;School of Physics and electronic information, Gannan normal University;School of Electronics Engineering and Computer Science, Peking University;
【机构】 电子科技大学极高频复杂系统重点学科实验室; 赣南师范学院物理与电子信息学院; 北京大学信息科学技术学院;
【摘要】 利用双电抗补偿技术,采用LC并联拓扑结构,设计了工作在2GHz~6GHz的E类功率放大器.,在工作频带PAE大于55%,漏效率大于63%,增益大于8.2d B,输出功率大于4W,沟道温度升高小于112℃.
【Abstract】 A 2GHz ~6GHz class E power amplifier using the reactance compensation technique is applied to provide a broadband operation,the class E load network with a shunt capacitor and a series inductor is designed,,the amplifier provides an output power of over 4W and a flat gain of over 8.2d B ranging from 2~6GHz, with power added efficiency(PAE) of over 55% and a drain efficiency of over 63%.,the transistor temperature rise below 1120 C.
【Key words】 double reactance compensation; high efficiency; Ga N; power amplifier; broadband;
- 【会议录名称】 2015年全国微波毫米波会议论文集
- 【会议名称】2015年全国微波毫米波会议
- 【会议时间】2015-05-30
- 【会议地点】中国安徽合肥
- 【分类号】TN722.75
- 【主办单位】中国电子学会