【作者】 方志明； 刘堂； 韩克武； 党黎黎； 程知群； 张健；

【Author】 FANG zhiming;LIU tang;HAN kewu;DANG lili;CHENG zhiqun;ZHANG jian;Hangzhou Dianzi University of China;Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Micro-system and Information Technology;

【机构】 杭州电子科技大学； 中科院上海微系统与信息技术研究所；

【摘要】 针对氧气对V波段表现良好的吸收特性,基于0.1μm Ga As p HEMT工艺设计了一款V波段高镜像抑制度的二次谐波混频器,应用于大气检测接收设备中的射频前端。采用电阻型混频方式提高混频器的线性度。电路结构选择单平衡混频架构,中频电路正交输出,中频信号在片外合成,可以有效的抑制镜像噪声。芯片实测结果表明:RF的输入频率在51~60GHz,本振输入频率在25~30GHz范围内,中频带宽达到1GHz,IQ两路中频信号的相位差在±4°范围内;在射频范围内混频器的典型变频损耗为13d B,镜像抑制度达到39d B。更多还原

【Abstract】 For oxygen’s good absorption characteristics in V-band, based on 0.1μm Ga As p HEMT technology, designed a V-band second harmonic high image rejection mixer, used in atmospheric detection of RF front-end receiving device. The use of resistive mixer is to enhance linearity of the mixer. The Choices of single-balanced circuit structure architecture, IF quadrature output circuit, and the IF signal off-chip synthesis can effectively suppress image noise. Chip test results show that RF input frequency at 51 ~ 60 GHz, the LO input frequency in the 25 ~ 30 GHz range, IF bandwidth is 1GHz, the phase difference of the IF signal IQ stable at the range of ± 4 °; a typical conversion loss of the mixer is 13 d B in the radio frequency range, image rejection reaches 39 d B.更多还原