【作者】 刘建； 陈文华； 冯正和；

【Author】 Liu Jian;Chen Wenhua;Feng Zhenghe;Department of Electronic Engineering,Tsinghua University;

【机构】 清华大学电子工程系；

【摘要】 本文通过选用GaN高电子迁移率功放管分别设计了单路功放和双路Doherty功率放大器,用作2.6GHz TD-LTE系统的发射单元,通过实验比较了这两种不同结构的功放在放大TD-LTE系统高峰均比(PAPR)信号的能力(ACLR、EVM、漏极效率),单路功放饱和效率为72.5%,增益15dB;双路Doherty功放饱和效率为63.1%,回退6dB效率为53%,增益为15dB。更多还原

【Abstract】 In this paper,a one-way power amplifier and a two-way Doherty power amplifier are designed by using a GaN high electron mobility transistor.As to peak-to-average ratio(such as ACLR、 EVM、 Drain Efficiency),these two different kinds of PA for 2.6GHz TD-LTE system were compared by experiments.The implemented one-way PA achieves a measured 72.5% saturation efficiency and 15 dB gain;while the Doherty PA have 63.1%saturation efficiency and 53% efficiency of 6-dB power back-off.更多还原