【作者】 陈刚； 李理； 蒋浩； 陶然； 柏松； 李赟； 尹志军；

【Author】 Chen Gang;Li Li;Jiang Hao;Tao Ran;Bai Song;Li Yun;Ying Zhijun;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory;Nanjing Electronic Devices Institute;

【机构】 单片集成电路和模块国家级重点实验室； 南京电子器件研究所；

【摘要】 本文通过采用导通4H-SiC衬底上的同质多层外延材料,成功制作出L波段SiC SIT（静电感应晶体管）。该器件研制中,采用了介质辅助剥离、高能离子注入及高温退火、密集栅凹槽、介质钝化等工艺,有效抑制了漏电并提高了器件击穿电压,器件功率输出能力由此得到提升。正向特性测试:在栅压+3.5V,漏压10V时,0.5mm栅宽的SIT的电流密度达到130mA/mm,G_m=24mS/mm。反向特性测试:V_g=-12V时,BV_ds=202V,电压增益BV gain=22;V_g=-16V:BV_ds=320V,最大达到440V。最终4cm栅宽SiC SIT器件,在L波段的1GHz、80V工作电压下,脉冲宽度100μs,占空比1%时,输出功率达到了66W,功率密度16.5W/cm,此时功率增益为6.2dB。脉冲宽度100μs,占空比10%时,输出功率最大达到56.89W,同时功率增益为5.55dB,效率为35.55%。更多还原

【Abstract】 In this paper,SiC SIT devices with 66 W output power have been fabricated on SiC epitaxial wafer for L band applications.The developed devices adopted a p-type Al ion implanted gate with a recessed structure and power performance was improved by decreased leakage current and enhanced break-down voltage.The lift-off with assistant dielectric,dense gate recess etching,high temperature anneals and PECVD passivation process technologies are adopted.At 3.5V gate voltage and 10 V drain voltage,the maximum current density of the 0.5mm SiC SIT is130mA/mm,and the maximum transconductance is 24mS/mm.V_g =-12V:BV_ds = 202 V,the BV gain = 22;V_g=-16V:BV_ds = 320 V,the maximum BV_ds is 440 V.At L band 1GHz and 80 V drain to source voltage,a 4cm gate periphery SiC SIT exhibited an output power of 66 W with a gain of 6.2dB under pulsed pulse width 100μs and cycle ratio 1%RF operation.At pulse width 100μs and cycle ratio 10%,output power is 56.89 W with a gain of 5.55 dB and the drain efficiency of 35.55%。更多还原