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碲镉汞红外探测器的前沿技术综述
A Latest Technique Summary of HgCdTe Infrared Photoelectric Detectors
【Author】 Ye Zhenhua;Chen Yiyu;Zhang Peng;Shanghai Institute of Technical Physics, Chinese Academy of Sciences;Graduate School of Chinese of Sciences;
【机构】 中科院上海技术物理研究所; 中国科学院研究生院;
【摘要】 红外光电探测器件在军事、民用、科学研究方面的应用非常重要。而碲镉汞(Hg Cd Te)因为其材料自身的诸多优点,在红外光电探测器的发展中,起到了至关重要的作用,至今仍然是重要的战略战术应用首选的材料体系。本文首先分析了新一代红外探测器提出的SWa P3概念,而后简略地介绍了在第三代红外焦平面研究的背景下Hg Cd Te薄膜的衬底水平与材料生长情况,最后总结了大规模阵列(Large Format)器件、甚长波(VLWIR)器件、高工作温度(HOT)器件、超光谱(Hyper-spectral)探测器件、双色(Two-color or Dual-band)器件、雪崩光电(APD)器件等前沿技术方面的研究进展。
【Abstract】 Infrared(IR) detectors have shown their versatility in applications for military, civilian and scientific research applications. Among many materials, Hg Cd Te plays one of the most important roles in the development of IR detectors. Nowadays, Hg Cd Te is still the best choice for many applications. This article analyzed the SWa P3 concept of the latest generation infrared detector, and then introduced the Hg Cd Te material qualified for third generation FPAs. At last, the development of large/super large format device, VLWIR detectors, HOT detectors, hyper-spectral devices, dual-band devices and APDs(Avalanche Photo Diodes) were summarized.
- 【会议录名称】 上海市红外与遥感学会第十九届学术年会论文集
- 【会议名称】上海市红外与遥感学会第十九届学术年会
- 【会议时间】2014-12-04
- 【会议地点】中国上海
- 【分类号】TN215
- 【主办单位】上海市红外与遥感学会