【作者】 江若琏； 陈鹏； 赵作明； 沈波； 郑有斗；

【Author】 JIANG Ruo-lian;CHEN Pen;ZHAO Zuo-ming;SHEN Bo;ZHENG You-dou;Department of Physics,Nanjing University;

【机构】 南京大学物理系；

【摘要】 <正>GaN-based materials have attracted great interest because of its direct and wide band gap,high-saturation electron drift velocity and the excellent physical and chemical properties.In the recent years,the growth technology of GaN on sapphire has been relatively mature.GaN films grown on Si substrates are more attractive for their low cost,large size and the possibility of integrating GaN and Si devices.However更多还原