【作者】 杨振； 赵青南； 王燕芳； 刘旭； 罗乐平；

【Author】 YANG Zhen;ZHAO Qing-nan;WANG Yan-fang;LIU Xu;LUO Le-ping;State Key Laboratory of Silicate Materials for Architecture,Wuhan University of Technology;

【机构】 武汉理工大学硅酸盐建筑材料国家重点实验室；

【摘要】 在室温下,采用射频溅射法,在玻璃衬底和沉积了一层SiO₂缓冲层的玻璃衬底上,用Al₂O₃:ZnO（Al₂O₃含量为2%wt）为靶材,制备了Al:ZnO（AZO）透明导电薄膜。分别采用X射线衍射、扫描电子显微镜、紫外-可见分光光度计和四探针测试仪测试和分析了薄膜的结构形貌和光电性能。实验结果表明,与在玻璃上直接镀AZO膜层的样品比较,SiO₂缓冲层使.AZO薄膜的（002）面对应的衍射峰半峰宽（FWHM）变窄,AZO薄膜的电阻率最低可达到10^-4Ω.cm,可见光透过率达到82%。更多还原

【Abstract】 Al-doped ZnO（AZO）films were deposited by RF magnetron sputtering of ZnO target mixed with Al₂O₃（2%wt Al₂O₃）on glass substrate and glass substrate with the SiO₂ buffer layer at room temperature.The microstructure,optical and electrical properties of the AZO films were investigated by X-ray diffraction（XRD）,scanning electrical microscope（SEM）,UV-Vis spectrophotometer and four-point probe.The results show that films with the SiO₂ buffer layer had a smaller full width at half maximum（FWHM）of（002） diffraction peak compared with the samples prepared directly on glass substrate.The electrical resistivity of the AZO film could reach as low as 10^-4Ω.cm,while the average transmittance in visible region was 82%.更多还原