【作者】 刘敏波； 陈伟； 姚志斌； 何宝平； 黄绍艳； 盛江坤； 肖志刚； 王祖军；

【Author】 LIU Min-bo;CHEN Wei;YAO Zhi-bin;HE Bao-ping;HUANG Shao-yan;SHENG Jiang-kun;XIAO Zhi-gang;WANG Zu-jun;State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology;

【机构】 西北核技术研究所强脉冲辐射环境模拟与效应国家重点实验室；

【摘要】 选取了两种类型的双极晶体管和九种双极集成电路,利用^-1Co放射源开展了四种不同剂量率下的辐照实验,测量了双极晶体管基极电流以及运算放大器和比较器的输入偏置电流等辐射敏感参数随总剂量的变化规律,获得了器件的低剂量率增强因子;实验结果表明,双极器件具有低剂量率辐射损伤增强效应,集成电路的低剂量率增强因子大于晶体管的增强因子,并且不同结构和工艺的双极器件的低剂量率增强效应相差很大。更多还原

【Abstract】 Two types of bipolar transistors and nine types bipolar integrated circuit were selected in the irradiation experiment at different ⁶⁰Co γ dose rate.The base current of bipolar transistor and input bias current of amplifier and comparator was measured,low dose enhance factor of test device was obtained.The results show that bipolar device have enhanced low dose rate sensitivity,enhancement factor of bipolar integrated circuit was bigger than that of transistor,and enhanced low dose rate sensitivity greatly varied with different structure and process of bipolar device.更多还原