【作者】 封国强； 姜昱光； 朱翔； 韩建伟；

【Author】 FENG Guo-qiang;JIANG Yu-guang;ZHU Xiang;HAN Jian-wei;National Space Science Center,Chinese Academy of Sciences;University of Chinese Academy of Sciences;

【机构】 中国科学院空间科学与应用研究中心； 中国科学院大学；

【摘要】 以SRAM型FPGA为试验对象,研究脉冲激光模拟重离子产生单粒子多位翻转效应的可行性。FPGA的多位翻转依据其物理位置关系的不同分为3种类型:同帧同字节、同帧相邻字节和相邻帧。针对Virtex-ⅡFPGA分别进行脉冲激光与重离子的单粒子多位翻转效应的测试,对比脉冲激光和重离子在Virtex-ⅡFPGA产生多位翻转的类型、多位翻转的物理位置关系。结果表明,脉冲激光触发的Virtex-ⅡFPGA的多位翻转物理位置关系与重离子相同,对比脉冲激光与重离子的饱和翻转截面发现,应用脉冲激光和重离子得到的Virtex-Ⅱ饱和翻转截面基本一致,表明脉冲激光可模拟重离子研究Virtex-ⅡFPGA的多位翻转效应。更多还原

【Abstract】 The testing method of multi-bit upset in SRAM FPGA by pulsed laser was investigated.There are three types of multi-bit upsets according to physical location in FPGA,such as one byte in one frame,adjacent bytes in one frame and adjacent frames.Virtex-Ⅱ FPGA were irradiated by pulsed laser and heavy ions,and the species and relative positions for multi-bit upset were obtained.The relative physical positions of multi-bit upset induced by pulsed laser and heavy ions are same.The saturation crosssections of multi-bit upset induced by pulsed laser and heavy ions are consistent.The pulsed laser testing is fit for the investigation of multi-bit upset in FPGA.更多还原