【作者】 赵强； 罗一生； 刘祚麟； 马建福； 张万里；

【Author】 ZHAO Qiang LUO Yi-sheng LIU Zuo-lin MA Jian-fu ZHANG Wan-li (State Key Lab of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,Chengdu 610054,China)

【机构】 电子科技大学电子薄膜与集成器件国家重点实验室；

【摘要】 采用倒筒式射频溅射方法,在 Pt/Ti/SiO₂/Si 基片上制备了 Ba_0.65Sr_0.35TiO₃（简称 BST）薄膜。研究了自偏压对 BST 薄膜结构及电学性能的影响。在较高自偏压下制备的 BST 薄膜具有高度的（100） 择优取向,且结晶性好,表面平整,耐压能力强。在25℃时薄膜的热释电系数高达6.73×10^-7C·cm^-2·K^-1。研究结果表明,利用倒筒式射频溅射方法适当提高自偏压,可以制备出热释电性能优良的 BST 薄膜。更多还原

【Abstract】 Ba_0.65Sr_0.35TiO₃（BST）thin films were deposited on Pt/Ti/SiO₂/Si substrates by inverted cylindrical RF sputtering.The influence of target self-bias voltage on the microstructure and electrical properties of sputtered BST films was investigated.Deposited at high target self-bias voltage,the BST thin films are highly（100）-orientation,and have smooth surface,excellent crystallinity and good withstand voltage properties.The pyroelectric coefficients of BST thin films are 6.73×10^-7 C·cm^-2·K^-1 at 25℃ and at 12 V/μm.Our results reveal that high pyroelectric property of BST thin film could be achievable using inverted cylindrical RF sputtering with high target self-bias voltage.更多还原